Code Guidelines

Materials supported

Material/short nameDescriptionReference
GaAs/GaAsgallium arsenide (GaAs)Palik and Zollner
GaN/GaNgallium nitrideGoldhahn et al
silicon/SisiliconPalik
germanium/GegermaniumPalik
Al2O3/Al2O3ret_n returns n ordinary onlyas above
ITO/ITOIndium tin oxideS. Laux, N. Kaiser, A. Zöller, R. Götzelmann, H. Lauth, and H. Bernitzki,"Room-temperature deposition of indium tin oxide thin films with plasma ion-assisted evaporation," Thin Solid Films, Vol. 335, pp. 1-5 (1998)
N-BK7/N-BK7N-BK7www.schott.com
N-SK11/N-SK11N-SK11as above
N-SF6/N-SF6N-SF6as above
N-LaK22/N-LaK22N-LaK22as above
N-SF56/N-SF56N-SF56as above
N-SF5/N-SF5N-SF5as above
N-SF10/N-SF10N-SF10as above
N-BaF10/N-BaF10N-BaF10as above
N-SF66/N-SF66N-SF66as above
N-BaSF64/N-BaSF64N-BaSF64as above
N-SF57/N-SF57N-SF57as above
S-BaH11/S-BaH11S-BaH11www.ohara-gmbh.com
SiO2(a) at 20 degC/SiO2aamorphous SiO2 at 20 degCI. H. Malitson, "Interspecimen comparison of the refractive index of fused silica, " J. Opt. Soc. Am. 55, no. 10 (October 1965), pp. 1205-1209
Si3N4/Si3N4a typical non-crystalline thin film of silicon nitride (Si3N4)Palik
chromium/Crchromiumas above
iron/Feironas above
nickel/Ninickelas above
copper/Cucopperas above
titanium/TititaniumP. B. Johnson and R. W. Christy, "Optical constants of transition metals: Ti, V, Cr, Mn, Fe, Co, Ni, and Pd,"Phys. Rev. B, Vol. 9, No. 12, 15 June 1974, pp. 5056-5070.
gold/AugoldPalik
aluminum/Alaluminumas above
molybdenum/Momolybdenumas above
Variable ratio silicon nitride (SiNx)/SN16_300Various molar ratios of silicon nitride, depending on fabrication parameters. Here, SNXX_YYY is as follows: XX indicates reactive gas flow rate (14 means 1.4 SCCM). YYY indicates sputter power in Watts.In this case, the data were obtained via semi-automatic extraction from the plots in the ref.J. Kischkat,S. Peters et al.,"Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride," 1 October 2012 / Vol. 51, No. 28 / APPLIED OPTICS
Variable ratio silicon nitride (SiNx)/SN18_300Various molar ratios of silicon nitride, depending on fabrication parameters. Here, SNXX_YYY is as follows: XX indicates reactive gas flow rate (14 means 1.4 SCCM). YYY indicates sputter power in Watts.In this case, the data were obtained via semi-automatic extraction from the plots in the ref.as above
Variable ratio silicon nitride (SiNx)/SN20_300Various molar ratios of silicon nitride, depending on fabrication parameters. Here, SNXX_YYY is as follows: XX indicates reactive gas flow rate (14 means 1.4 SCCM). YYY indicates sputter power in Watts.In this case, the data were obtained via semi-automatic extraction from the plots in the ref.as above
Variable ratio silicon nitride (SiNx)/SN40_300Various molar ratios of silicon nitride, depending on fabrication parameters. Here, SNXX_YYY is as follows: XX indicates reactive gas flow rate (14 means 1.4 SCCM). YYY indicates sputter power in Watts.In this case, the data were obtained via semi-automatic extraction from the plots in the ref.as above
AZO/AZOreal index of refraction n only; complex index k is not supported. Per ref: "To enhance optical and electrical properties of AZO thin film, the deposition was performed by a DC magnetron sputtering system with a substrate heater. The AZO window layer of 420-nm-thick was deposited at the substrate temperature of 80 deg C."Yi-Chih Wang,Bing-Yi Lin,Po-Tsun Liu, and Han-Ping D. Shieh, "Photovoltaic electrical properties of aqueous grown ZnO antireflective nanostructure on Cu(In,Ga)Se2 thin film solar cells," OPTICS EXPRESS, 13 January 2014, Vol. 22, No. S1
ZnO Nanorod (top)/ZNO_NR_TOPreal index of refraction n only; complex index k is not supported. Per ref: "CIGSe devices were immersed in the aqueous solution of zinc nitrate hexahydrate (Zn(NO3)2 .6H2O) and hexamethylenetetramine (C6H12N4, HMT) mixture (with) concentration of 0.04 and 0.01 M, respectively." This was heated to 95 deg C to prepare the nanorods; the growth time ranged from 8 to 25 minutes. Top, bottom refer to location within the NR.While material characteristics may vary with fabrication technique, the ref gives good reference values for comparison purposes. as above
ZnO Nanorod (bottom)/ZNO_NR_BOTreal index of refraction n only; complex index k is not supported. Per ref: "CIGSe devices were immersed in the aqueous solution of zinc nitrate hexahydrate (Zn(NO3)2 .6H2O) and hexamethylenetetramine (C6H12N4, HMT) mixture (with) concentration of 0.04 and 0.01 M, respectively." This was heated to 95 deg C to prepare the nanorods; the growth time ranged from 8 to 25 minutes. Top, bottom refer to location within the NR.While material characteristics may vary with fabrication technique, the ref gives good reference values for comparison purposes. as above
Bulk material fabricated using Au or Ag nanospheres. /Au_NANO1Au_NANO1: nanospheres 13.5 +/-1 nm in dia. Fabricated in water in a litographically-defined trench, with water evaporation through semi permeable membrane.Alexandre Baron, Antonio Iazzolino, Kévin Ehrhardt, Jean-Baptiste Salmon, Ashod Aradian, Vasyl Kravets, Alexander N. Grigorenko, Jacques Leng, Aurélie Le Beulze, Mona Tréguer-Delapierre, Miguel A. Correa-Duarte, and Philippe Barois, "Bulk optical metamaterials assembled by microfluidic evaporation," Opt. Mater. Express 3, 1792-1797 (2013)
Bulk material fabricated using Au or Ag nanospheres. /Au_NANO2Au_NANO2: nanospheres 15.2 +/-2 nm core dia with 8.5 nm +/1 nm silica shell thickness. Fabricated in water in a litographically-defined trench, with water evaporation through semi permeable membrane.as above
Bulk material fabricated using Au or Ag nanospheres./Ag_NANO1Ag_NANO1: nanocubes 30+/-1 nm. Fabricated in water in a litographically-defined trench, with water evaporation through semi permeable membrane.as above
Bulk material fabricated using Au or Ag nanospheres./Ag_NANO2Ag_NANO2: 50+/-5 nm cored diameter,with silica shell thickness 25+/-5 nm(NanoComposix). Fabricated in water in a litographically-defined trench, with water evaporation through semi permeable membrane.as above
Three-layered Ag-low-permittivity (LP)-high-permittivity (HP) nanoshell/AgLPHPNumerical simulations in this case performed for the case of a nanosphere with concentric spheres of Ag-SiO2-Si with the following radii respectively: 35,40,91 nm. Calculations assume filling fraction of 0.5 in vacuum.DaJian Wu, ShuMin Jiang, Ying Cheng, and XiaoJun Liu, "Three-layered metallodielectric nanoshells: plausible meta-atoms for metamaterials with isotropic negative refractive index at visible wavelengths," Opt. Express 21, 1076-1086 (2013)
nanoparticulate ITO layers/ITO_NANONote that layers fabricated from nanoparticles have different optical properties from those of the corresponding bulk material, due to residual porosity and other factors. Per ref: "ITO nanoparticles with a particle size distribution ranging from 20 nm to 120 nm commercially available from Evonik Industries AG. We prepared an ITO suspension by dispersing the nanoparticles in ethanol at a 20 wt % loading. In order to prevent agglomeration of the particles in the suspensions we added 2-[2-(2-Methoxyethoxy) ethoxy]acetic acid, also known as trioxydecanoic acid, which works as a steric stabilizer."M. Baum, I. Alexeev,M. Latzel, S. H. Christiansen and M. Schmidt, "Determination of the effective refractive index of nanoparticulate ITO layers," OPTICS EXPRESS, 23 Sep, 2013, Vol. 21 No. 19
Metal–polymer nanocomposite of poly-para-xylylene–Ag/PPX_Ag_5polyparaxylylene–silver (PPX–Ag), with volume concentration of silver of 5%. From the ref: "obtained by cryochemical synthesis (at 77K) in vacuum (pressure in the chamber about 10^-7 Pa) in the form of thin films having a known thickness on quartz substrates with various volume concentrations of silver (0, 5, 7, 9, 11%{and 15%} )" .Values were calculated from measured reflection spectra.I. A. Boginskaya, K. N. Afanas’ev, A. S. Il’in, A. V. Gusev, K. A. Mailyan, and I. A. Ryzhikov" Calculating the optical constants, refractive indices, and extinction coefficients of the metal–polymer composite polyparaxylylene–silver,"J. Opt. Technol. 80 (1), January 2013.
Metal–polymer nanocomposite of poly-para-xylylene–Ag/PPX_Ag_7polyparaxylylene–silver (PPX–Ag), with volume concentration of silver of 7%. From the ref: "obtained by cryochemical synthesis (at 77K) in vacuum (pressure in the chamber about 10^-7 Pa) in the form of thin films having a known thickness on quartz substrates with various volume concentrations of silver (0, 5, 7, 9, 11%{and 15%} )" .Values were calculated from measured reflection spectra.as above
Metal–polymer nanocomposite of poly-para-xylylene–Ag/PPX_Ag_9polyparaxylylene–silver (PPX–Ag), with volume concentration of silver of 9%. From the ref: "obtained by cryochemical synthesis (at 77K) in vacuum (pressure in the chamber about 10^-7 Pa) in the form of thin films having a known thickness on quartz substrates with various volume concentrations of silver (0, 5, 7, 9, 11%{and 15%} )" .Values were calculated from measured reflection spectra.as above
Metal–polymer nanocomposite of poly-para-xylylene–Ag/PPX_Ag_11polyparaxylylene–silver (PPX–Ag), with volume concentration of silver of 11%.From the ref: "obtained by cryochemical synthesis (at 77K) in vacuum (pressure in the chamber about 10^-7 Pa) in the form of thin films having a known thickness on quartz substrates with various volume concentrations of silver (0, 5, 7, 9, 11%{and 15%} )" .Values were calculated from measured reflection spectra.as above
Metal–polymer nanocomposite of poly-para-xylylene–Ag/PPX_Ag_15polyparaxylylene–silver (PPX–Ag), with volume concentration of silver of 15%. From the ref: "obtained by cryochemical synthesis (at 77K) in vacuum (pressure in the chamber about 10^-7 Pa) in the form of thin films having a known thickness on quartz substrates with various volume concentrations of silver (0, 5, 7, 9, 11%{and 15%} )" .Values were calculated from measured reflection spectra.as above
Metal–polymer nanocomposite of poly-para-xylylene–Ag/PPX_Ag_0polyparaxylylene–silver (PPX–Ag), with volume concentration of silver of 0%. From the ref: "obtained by cryochemical synthesis (at 77K) in vacuum (pressure in the chamber about 10^-7 Pa) in the form of thin films having a known thickness on quartz substrates with various volume concentrations of silver (0, 5, 7, 9, 11%{and 15%} )" .Values were calculated from measured reflection spectra.as above
paraelectric K0.95Na0.05Ta0.58Nb0.42O3 single crystal with Tc near room temperature/KNTN_1cut along the [001] direction. Sample size 2.201 mm (w) x 1.961 mm (l) x 1.981 mm (t). Grown by improved top seed solution methodBo Yao, Hao Tian, Chengpeng Hu, Zhongxiang Zhou, and Dajun Liu, "Wavelength dependence of electro-optic effect in paraelectric potassium sodium tantalate niobate single crystal," Appl. Opt. 52, 8229-8232 (2013) 
structure made of multilayer metallodielectric metamaterial and nanofabrication accessible design/p1985_6Au_5Kap_8nnunit cell defined as follows: square 1985x1985nm,alternating layers and thicknesses: 6 of gold at t=46 nm,5 of Kapton at d=76 nm, 8 subwavelength features g=341 nm wide in square layout; 2 features per side. Further details in the ref.Zhi Hao Jiang, Lan Lin, Jeremy A. Bossard, and Douglas H. Werner, "Bifunctional plasmonic metamaterials enabled by subwavelength nano-notches for broadband, polarization-independent enhanced optical transmission and passive beam-steering," Opt. Express 21, 31492-31505 (2013) 
ATO/ATOantimony (Sb)-doped tin oxide (6 wt.% Sb2O3-doped SnO2) (ATO). The ATO thin films were deposited by using an RF magnetron sputtering system to a thickness of about 60 nm.Jung Woo Leem, Hee Kwan Lee, Dong-Hwan Jun, Jonggon Heo, Won-Kyu Park, Jin-Hong Park, and Jae Su Yu, "Electrochemically synthesized broadband antireflective and hydrophobic GaOOH nanopillars for III-V InGaP/GaAs/Ge triple-junction solar cell applications," Opt. Express 22, A328-A334 (2014) 
CH3NH3PbI3/CH3NH3PbI3 The CH3NH3PbI3 film was fabricated by dual-source evaporation.Xie Ziang, Liu Shifeng, Qin Laixiang, Pang Shuping, Wang Wei, Yan Yu, Yao Li, Chen Zhijian, Wang Shufeng, Du Honglin, Yu Minghui, and G. G. Qin"Refractive index and extinction coefficient of CH3NH3PbI3 studied by spectroscopic ellipsometry" Optical Materials Express, Vol. 5, Issue 1, pp. 29-43 (2015)
As2S3/As2S3Ref uses measured n at three lambdas (633, 825, 1551 nm) to determine Cauchy relationship which Luxpop uses for this mat'l. Suitability of Cauchy relationship beyond these points unclear, but since ref states that bandgap is 2.3 eV (539 nm), Luxpop uses the Cauchy relationship at 550 and beyond, safely beyond the bandgap. Material grown using RF sputtering, 1.5 micron thick films on BK7.F. Verger, V. Nazabal, F. Colas, P. Nemec, C. Cardinaud, E. Baudet, R. Chahal, E. Rinnert, K. Boukerma, I. Peron, S. Deputier, M. Guilloux-Viry, J.P. Guin, H. Lhermite, A. Moreac, C. Compère, and B. Bureau, "RF sputtered amorphous chalcogenide thin films for surface enhanced infrared absorption spectroscopy," Optical Materials Express, Vol. 3, Issue 12, pp. 2112-2131 (2013)
Ge25Sb10Se65_m3/Ge25Sb10Se65_m3"Refractive index dispersion curves of Ge25Sb10Se65 thin films determined by variable angle spectroscopic ellipsometry (VASE).Chalcogenide thin films were deposited by RF magnetron sputtering under the following conditions... Working pressure and the Ar gas flow was 5e10-3 mbar and 25sccm; ...sputtering power 40W"as above
Ge25Sb10Se65_m2/Ge25Sb10Se65_m2"Refractive index dispersion curves of Ge25Sb10Se65 thin films determined by variable angle spectroscopic ellipsometry (VASE).Chalcogenide thin films were deposited by RF magnetron sputtering under the following conditions... Working pressure and the Ar gas flow was 5e10-2 mbar and 100sccm; ...sputtering power 40W"as above
Ca3NbGa3Si2O14 (no)/CNGS (no)Ordinary index CNGS. See ref for fabrication details. "refractive ind(ices) were measured by the minimum-deviation method at 12 different wavelengths ranging from 365 nm to 2325 nm (no and ne of CNGS was not measured for 1529.58 nm)". Transmission on all 3 axes is in the 75-85% range across the entire spectral range with no absorption peaks. UV absorption edge is at 275 nm.Xiaotong Zhang, Xuzhao Zhang, Shiyi Guo, Jingliang He, Kezhen Han, Fei Lou, Baitao Zhang, Ruihua Wang, and Xunmin Liu,"Growth and optical properties of a new CGG-type laser crystal Nd3+:CNGS,"Optical Materials Express, Vol. 5, Issue 5, pp. 977-985 (2015)
Ca3NbGa3Si2O14 (no)/CNGS (ne)Extraordinary index CNGS. The rest is same as CNGS ordinary.as above
Nd3+:Ca3NbGa3Si2O14 (no)/Nd3+:CNGS(no)Ordinary index ND:CNGS. Similar fabrication and measurement parameters as CNGS. The exception is that on the absorption there are four absorption peaks at 586,748,800 and 804 nm.as above
Nd3+:Ca3NbGa3Si2O14 (no)/Nd3+:CNGS(no)Extraordinary index ND:CNGS. The rest is same as Nd3+:CNGS ordinary.as above
BHESP/phthalic acid/BHESP/PAPer the ref: First, PA/PDM, PA/BHESP, and TDGA/BHESP combinations are dissolved into dimethyl sulfoxide (1 M) respectively, and heated at 160 °C for 1 h for pre-polymerization. Then, the pre-polymerized combinations are cast on quartz-glass plates and baked in a vacuum oven at 180 °C for 6 h for final polymerization. Bin Cai, Toshikuni Kaino, Okihiro Sugihara,"Sulfonyl-containing polymer and its alumina nanocomposite with high Abbe number and high refractive index ,"Optical Materials Express 5(5) 1210-1216, May 2015
BDM/phthalic acid/BDM/PAPer the ref: First, PA/PDM, PA/BHESP, and TDGA/BHESP combinations are dissolved into dimethyl sulfoxide (1 M) respectively, and heated at 160 °C for 1 h for pre-polymerization. Then, the pre-polymerized combinations are cast on quartz-glass plates and baked in a vacuum oven at 180 °C for 6 h for final polymerization. Bin Cai, Toshikuni Kaino, Okihiro Sugihara,"Sulfonyl-containing polymer and its alumina nanocomposite with high Abbe number and high refractive index ,"Optical Materials Express
BHESP/TDGA/BHESP/TDGAPer the ref: First, PA/PDM, PA/BHESP, and TDGA/BHESP combinations are dissolved into dimethyl sulfoxide (1 M) respectively, and heated at 160 °C for 1 h for pre-polymerization. Then, the pre-polymerized combinations are cast on quartz-glass plates and baked in a vacuum oven at 180 °C for 6 h for final polymerization. as above






















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