VERIFICATION #9: InP at 980 nm

For room temperature indium phosphide (InP) at a wavelength of 980 nm (energy = 1.27 eV), the complete index of refraction is n = 3.404 and k = 0.007.
Additional information for this material: the room temperature lowest indirect gap energy is 2.05 eV. See reference for more details. Results communicated here are most accurate between 207 and 826 nm.
References:
[1] S. Adachi, "Model dielectric constants of Gap, GaAs, GaSb, InP, InAs, and InSb," Phys. Rev. B Vol. 35, No. 14, 15 May, 1987, pp. 7454-7463.
[2] D. E. Aspnes and A. A. Studna, "Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV," Phys. rev. B Vol. 27, No. 2, pp.985-1009 (1983).

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